用各向同性材料实现宽带声波功能器件设计

利用坐标变换的方法并结合保角映射技术,论文介绍了一种利用常规的各向同性材料来设计声波器件的方法.基于此理论,设计了二维声波隐身斗篷,并进行有限元模拟,证明了该器件的有效性.另外由于设计中没有利用材料共振的性质,所以器件是宽带有效的.该方法将有助于拓宽声波功能器件的设计,并为实验验证声波器件提供了可能.     

The interlayer shear effect on graphene multilayer resonators

Graphene nanostrips with single or few layers can be used as bending resonators with extremely high sensitivity to environmental changes. In this paper we report molecular dynamics (MD) simulation results on the fundamental and secondary resonant frequencies f of cantilever graphene nanostrips with different layer number n and different nanostrip length L. The results deviate significantly from the prediction of not only the Euler-Bernoulli beam theory (f∝nL⁻²), but also the Timoshenko's model. Since graphene nanostrips have extremely high intralayer Young's modulus and ultralow interlayer shear modulus, we propose a multibeam shear model (MBSM) that neglects the intralayer stretch but accounts for the interlayer shear. The MBSM prediction of the fundamental and secondary resonant frequencies f can be well expressed in the form f−f_mono∝[(n-1)/n]^bL^−2(1−b), where f_mono denotes the corresponding resonant frequency as the layer number is 1, with b=0.61 and 0.77 for the fundamental and secondary resonant modes. Without any additional parameters fitting, the prediction from MBSM agrees excellently with the MD simulation results. The model is thus of importance for designing multilayer graphene nanostrips based applications, such as resonators, sensors and actuators, where interlayer shear has apparent impacts on the mechanical deformation, vibration and energy dissipation processes therein.     

A finite‐volume scheme for the multidimensional quantum drift‐diffusion model for semiconductors

A finite‐volume scheme for the stationary unipolar quantum drift‐diffusion equations for semiconductors in several space dimensions is analyzed. The model consists of a fourth‐order elliptic equation for the electron density, coupled to the Poisson equation for the electrostatic potential, with mixed Dirichlet‐Neumann boundary conditions. The numerical scheme is based on a Scharfetter‐Gummel type reformulation of the equations. The existence of a sequence of solutions to the discrete problem and its numerical convergence to a solution to the continuous model are shown. Moreover, some numerical examples in two space dimensions are presented. © 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 27: 1483–1510, 2011     

基于迈克耳孙干涉仪的微机械光纤信号调制器

基于迈克耳孙干涉仪原理,设计了利用双光束干涉效应的微机械光纤信号调制器.实验中从输入端输入的光纤信号,经分光板后分为光强相等的透射光束与反射光束;调制信号以电压形式加载于压电陶瓷,使其伸缩振荡,以调制透射光束与反射光束之间的光程差;透射光束与反射光束经透镜聚焦后在输出端面发生双光束干涉,在输出端输出被调制的光信号,再耦...     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Cu(L-His)2溶液配位结构的X射线吸收精细结构分析

采用X射线吸收精细结构分析(XAFS)方法分析Cu(His)₂复合物的配位模式,通过测定不同pH值下的铜的K边XAFS吸收谱,研究Cu(His)₂第一配位壳层的结构．为了更准确地验证Cu(His)₂配位结构,对组氨酸的羧基和咪唑分别进行了化学修饰．研究结果明确了在不同pH环境下组氨酸的羧基、氨基和咪唑的配位情况．对于争议最大的在生理pH值下组氨酸的配位方式,其结果更支持六配位模式,同时可能有少量的五配位模式配合物平衡存在.     

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Coupling electron‐hole (e^–‐ h⁺) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ～420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h_fe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

大视场星敏感器标定技术研究

大视场星敏感器光学系统,由于畸变量较大,在轨标定过程中,直接采用最小二乘最优估计(LMS)或扩展卡尔曼滤波方法(EKF)无法精确求解其标定参数。在深入分析星敏感器测量误差因素的基础上,对考虑畸变和不考虑畸变两种情况的在轨标定结果进行了仿真对比;指出了标定焦距之前需先标定光学畸变的必要性,并介绍了4种可用于在轨校正光学畸变的方法;提出先标定主点偏差,再标定光学畸变参数,最后标定焦距的标定方法。仿真结果表明,可以采用像面旋转法求取主点偏差,利用高阶多项式方法求取光学畸变参数,畸变校正后,采用LMS和EKF标定算法估计焦距,标定精度达到了3.1μm和2.2μm。对100幅模拟星图处理后,星间角距统计偏差约为传统在轨标定方法的1/10～1/8。     

透镜检测中复合自动对焦技术的研究及应用

针对光学透镜参数测量系统中的对焦问题,设计了一种粗精结合的复合自动对焦方案.在粗对焦过程中,选用全局图像的方差函数作为清晰度评价函数,用均值比较的爬山法实现焦面搜索,并用三点法判断初始对焦方向.在精对焦过程中,利用基于数学形态学的条件膨胀算法和形状因子提取目标图像,并以日标图像区域内的Brenner函数作为清晰度评价函...     

BIG6模式下利用废旧设备开发光电实验

废旧设备作为高校的一类固定资产,如何处理好它,尽量发挥其残值,是高校设备管理的一个课题.相当多的废旧设备属于光电类器件,包含各自的光电工作原理,如激光打印机、光电鼠标、光驱等,利用此类废旧设备开发出对应的光电实验,可以作为光信息科学与技术专业的补充实验.开发过程基于BIG6信息问题解决模式,强调师生互动.提高学生的动手...